Flexible Surface Acoustic Wave Device with AlN Film on Polymer Substrate

Flexible Display Device with Organic Composite Film

This study presents the fabrication process and display characteristics of a flexible organic polymer display device that consists of a thin substrate of Polyether Sulfone, a multilayer serpentine-type microheater array that is fabricated on the substrate, and a UV-sensitive polydiacetylene (PDA)-polyvinyl alcohol (PVA) composite film. A retention time of one second is achieved with cell sizes ...

Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication

Flexible surface acoustic wave resonators built on disposable plastic film for electronics and lab-on-a-chip applications

Flexible electronics are a very promising technology for various applications. Several types of flexible devices have been developed, but there has been limited research on flexible electromechanical systems (MEMS). Surface acoustic wave (SAW) devices are not only an essential electronic device, but also are the building blocks for sensors and MEMS. Here we report a method of making flexible SA...

The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures

We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniqu...

Angular dependence of surface acoustic wave characteristics in AlN thin films on a-plane sapphire substrates

AlN thin films have been grown on a-plane sapphire (Al2O3(112̄0)) substrates. X-ray diffraction measurements indicate the films are fully c-plane (0001) oriented with a full width at half maximum of the AlN(0002) rocking curves of 0.76–0.92◦. The epitaxial growth relationships have been determined by the reflection high energy electron diffraction analysis as AlN[11̄00]//Al2O3[0001] and AlN[112̄0]...